Rohm Semiconductor's SiC Trench MOSFETs

SiC Trench MOSFETs

ROHM Semiconductor

The purpose of this training module is to provide a brief overview of ROHM’s 3rd generation SiC Trench MOSFETs and their advantages.

Part List

BildeManufacturer Part NumberBeskrivelseDrain til Source-spenningTilgjengelig antall PrisVis detaljer
SICFET N-CH 1700V 3.7A TO3PFMSCT2H12NZGC11SICFET N-CH 1700V 3.7A TO3PFM1700 V436 - Immediate$69.25Vis detaljer
SICFET N-CH 650V 21A TO247NSCT3120ALGC11SICFET N-CH 650V 21A TO247N650 V30 - Immediate$97.70Vis detaljer
SICFET N-CH 650V 39A TO247NSCT3060ALGC11SICFET N-CH 650V 39A TO247N650 V603 - Immediate$154.28Vis detaljer
SICFET N-CH 1200V 22A TO247SCT2160KECSICFET N-CH 1200V 22A TO2471200 V0 - Immediate$83.17Vis detaljer
SICFET N-CH 1200V 31A TO247NSCT3080KLGC11SICFET N-CH 1200V 31A TO247N1200 V0 - Immediate$198.91Vis detaljer
SICFET N-CH 1200V 40A TO247SCT2080KECSICFET N-CH 1200V 40A TO2471200 V0 - Immediate$146.87Vis detaljer
SICFET N-CH 650V 70A TO247NSCT3030ALGC11SICFET N-CH 650V 70A TO247N650 V450 - Immediate$285.05Vis detaljer
SICFET N-CH 1200V 55A TO247NSCT3040KLGC11SICFET N-CH 1200V 55A TO247N1200 V389 - Immediate$392.89Vis detaljer
SICFET N-CH 1200V 40A TO247SCH2080KECSICFET N-CH 1200V 40A TO2471200 V0 - ImmediateSee Page for PricingVis detaljer
SICFET N-CH 650V 93A TO247NSCT3022ALGC11SICFET N-CH 650V 93A TO247N650 V650 - Immediate$443.95Vis detaljer
SICFET N-CH 1200V 72A TO247NSCT3030KLGC11SICFET N-CH 1200V 72A TO247N1200 V253 - Immediate$606.48Vis detaljer
SICFET N-CH 1700V 4A TO268SCT2H12NYTBSICFET N-CH 1700V 4A TO2681700 V11 - Immediate$72.47Vis detaljer
SICFET N-CH 1700V 5.9A TO268SCT2750NYTBSICFET N-CH 1700V 5.9A TO2681700 V0 - Immediate$35.13Vis detaljer
SICFET N-CH 1200V 14A TO247SCT2280KECSICFET N-CH 1200V 14A TO2471200 V0 - Immediate$52.89Vis detaljer
SICFET N-CH 650V 29A TO220ABSCT2120AFCSICFET N-CH 650V 29A TO220AB650 V0 - ImmediateSee Page for PricingVis detaljer
SICFET N-CH 1200V 204A MODULEBSM180C12P2E202SICFET N-CH 1200V 204A MODULE1200 V0 - Immediate$6,148.00Vis detaljer
SICFET N-CH 1200V 17A TO247NSCT3160KLGC11SICFET N-CH 1200V 17A TO247N1200 V0 - Immediate$61.31Vis detaljer
SICFET N-CH 1200V 10A TO247SCT2450KECSICFET N-CH 1200V 10A TO2471200 V0 - Immediate$41.84Vis detaljer
SICFET N-CH 1200V 400A MODULEBSM400C12P3G202SICFET N-CH 1200V 400A MODULE1200 V4 - Immediate$9,602.42Vis detaljer
SICFET N-CH 1200V 600A MODULEBSM600C12P3G201SICFET N-CH 1200V 600A MODULE1200 V0 - Immediate$12,061.20Vis detaljer
PTM Published on: 2017-01-05
PTM Updated on: 2019-09-27

Related Videos

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

ROHM's SiC Power and Gate Driver Solutions
ROHM's SiC Power and Gate Driver Solutions

Publish Date: 2023-02-06

Related Product Highlight

4th Generation Silicon Carbide SiC MOSFETs ROHM's 4th generation silicon carbide MOSFETs are designed to deliver unparalleled efficiency and performance in demanding applications.
Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
SiC Schottky Barrier Diodes ROHM’s SiC Schottky barrier diodes are AEC-Q101 qualified for automotive use.

Related Articles and Blogs

Slik kan tap reduseres, virkningsgraden forbedres og temperaturområdet utvides i konstruksjoner med høy effekt Konstruktører kan bruke fjerdegenerasjons SiC MOSFET-er til å forbedre virkningsgraden, senke kostnadene og redusere størrelsen på høyspente styringskretser med høy effekt.
Halvledere med bred båndavstand forvandler transportverdenen Hele transportsektoren gjennomgår en radikal transformasjon med løsninger for el- og hybridbiler og renere massetransport.
Halvledere med bred båndavstand i konstruksjoner for luft- og romfart og satellitter Halvledere med bred båndavstand gir flere fordeler under strømomforming, for eksempel økt effekttetthet og virkningsgrad, og reduserer systemets størrelse og vekt.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
SiC Power Module SiC modules are ideally suited to replace higher current rating IGBT modules.