Nexperia

Cascode GaN FETs

Nexperia GaN FETs offer performance, efficiency, and reliability of power systems

Image of Nexperia’s Cascode GaN FETsNexperia cascode GaN FETs offer high power density, performance, and switching frequency. The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability, which are vital in next-generation power systems, such as Industry 4.0 and renewable energy applications. The unique cascode GaN FET solution facilitates easy driving of devices using well-known Si MOSFET gate drivers. They deliver unmatched high junction temperature [Tj (max) = +175°C], design freedom, and improved reliability of power systems.

Cascode GaN FETs

BildeManufacturer Part NumberBeskrivelseTilgjengelig antall PrisVis detaljer
GAN041-650WSB/SOT429/TO-247GAN041-650WSBQGAN041-650WSB/SOT429/TO-247199 - Immediate$133.25Vis detaljer
GANFET N-CH 650V 34.5A TO247-3GAN063-650WSAQGANFET N-CH 650V 34.5A TO247-30 - Immediate$109.68Vis detaljer
650 V, 33 MOHM GALLIUM NITRIDE (GAN039-650NBBHP650 V, 33 MOHM GALLIUM NITRIDE (817 - Immediate$135.35Vis detaljer
GAN111-650WSB/SOT429/TO-247GAN111-650WSBQGAN111-650WSB/SOT429/TO-247314 - Immediate$106.23Vis detaljer
650 V, 33 MOHM GALLIUM NITRIDE (GAN039-650NTBZ650 V, 33 MOHM GALLIUM NITRIDE (0 - Immediate$113.99Vis detaljer
GAN CASCODE FETSGAN039-650NTBJGAN CASCODE FETS611 - Immediate$135.35Vis detaljer
Published: 2024-09-04

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