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Reengineering Silicon Power Devices: How to improve both conduction and switching losses

This deep-dive explains how to reduce both conduction and switching losses without traditional tradeoffs. Learn key concepts like RDS(on), QSW, and EOSS, and see real boost converter test results demonstrating improved efficiency, performance, and reliability versus conventional silicon and GaN solutions.

4/23/2026 6:58:19 PM

Part List

BildeManufacturer Part NumberBeskrivelseFET-typeTeknologiDrain til Source-spenningTilgjengelig antall PrisVis detaljer
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MOSFET N-CH 200V 151A TOLL		IS20M5R5S1TMOSFET N-CH 200V 151A TOLLN-kanalMOSFET (metalloksid)200 V100 - Immediate$92.55Vis detaljer
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MOSFET N-CH 200V 172A TO-220		IS20M6R3S1PMOSFET N-CH 200V 172A TO-220N-kanalMOSFET (metalloksid)200 V977 - Immediate$70.91Vis detaljer
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MOSFET N-CH 200V 45A PDFN-8		IS20M028S1CMOSFET N-CH 200V 45A PDFN-8N-kanalMOSFET (metalloksid)200 V3106 - Immediate$34.92Vis detaljer
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MOSFET N-CH 200V 41A TO-220		IS20M028S1PMOSFET N-CH 200V 41A TO-220N-kanalMOSFET (metalloksid)200 V991 - Immediate$40.02Vis detaljer
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MOSFET N-CH 150V 133A PDFN-8		IS15M7R1S1CMOSFET N-CH 150V 133A PDFN-8N-kanalMOSFET (metalloksid)150 V0$55.99Vis detaljer