onsemi

NTBG070N120M3S Silicon Carbide (SiC) MOSFETs

onsemi's NTBG070N120M3S SiC MOSFETs are EliteSiC, 65 mΩ, 1200 V with M3S technology in the D2PAK-7L package

Image of onsemi's NTBG070N120M3S Silicon Carbide (SiC) MOSFETs onsemi's NTBG070N120M3S 1200 V M3S SiC MOSFETs are optimized for fast switching applications. They shrug off negative gate voltages and gate spikes thanks to planar technology. The NTBG070N120M3S MOSFETs hit peak performance at 18 V but remain agile at 15 V.

Features
  • D2PAK-7L package with Kelvin source configuration
  • Excellent FOM [ = RDS(ON) * EOSS ]
  • Ultra-low gate charge (Qg(tot) = 57 nC)
  • High-speed switching with low capacitance (COSS = 57 pF)
  • 15 V to 18 V gate drive
  • M3S technology: 65 mΩ RDS(ON) with low Eon and Eoff losses
  • 100% avalanche tested
  • Halide-free and RoHS compliant
Applications
  • Industrial

NTBG070N120M3S Silicon Carbide (SiC) MOSFETs

BildeManufacturer Part NumberBeskrivelseFET-typeTeknologiDrain til Source-spenningTilgjengelig antall PrisVis detaljer
SILICON CARBIDE (SIC) MOSFET - ENTBG070N120M3SSILICON CARBIDE (SIC) MOSFET - EN-kanalSiCFET (silisiumkarbid)1200 V1311 - Immediate$78.02Vis detaljer
Published: 2024-03-05