VideoLibrary

Driving Nexperia cascode GaN FETs with Broadcom Optocouplers

This video will show how GaN FETs are driven with Broadcom Optocouplers.

4/14/2025 7:28:33 PM

Part List

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
GANFET N-CH 650V 34.5A TO247-3GAN063-650WSAQGANFET N-CH 650V 34.5A TO247-30 - Immediate$110.16View Details
GAN041-650WSB/SOT429/TO-247GAN041-650WSBQGAN041-650WSB/SOT429/TO-247181 - Immediate$133.83View Details
GAN111-650WSB/SOT429/TO-247GAN111-650WSBQGAN111-650WSB/SOT429/TO-247309 - Immediate$106.69View Details
GAN CASCODE FETSGAN039-650NTBJGAN CASCODE FETS596 - Immediate$135.94View Details
650 V, 33 MOHM GALLIUM NITRIDE (GAN039-650NBBHP650 V, 33 MOHM GALLIUM NITRIDE (817 - Immediate$135.94View Details

Related Videos

Switching evaluation of fast GaN devices
Switching evaluation of fast GaN devices

Publish Date: 2025-04-14

Paralleling GaN FETs
Paralleling GaN FETs

Publish Date: 2025-04-14

Nexperia cascode GaN FETs
Nexperia cascode GaN FETs

Publish Date: 2025-04-07

Related Product Highlight

Cascode GaN FETs Nexperia cascode GaN FETs have high power density, performance, and switching frequency for power system applications such as Industry 4.0 and renewable energy.
GaN FETs Nexperia's GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.

Related Articles and Blogs

Wide Bandgap Semiconductors Drive Efficiency in Datacenters Since datacenters have huge energy requirements, power solutions that can reduce power losses, boost efficiency, and enhance thermal control are required.
Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Why and How to Apply GaN Field Effect Transistors for Efficient, Higher Voltage, Switch-Mode Power Applications Improve power efficiency and power density in higher voltage switch-mode power systems by understanding the principles and correct application of GaN FETs.