Name: SI7309DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7309DN-T1-E3TR-ND
Price: 19.65 NOK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI7309DN-T1-E3
DigiKey Part Number	SI7309DN-T1-E3TR-ND - Tape & Reel (TR) SI7309DN-T1-E3CT-ND - Cut Tape (CT) SI7309DN-T1-E3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI7309DN-T1-E3
Description	MOSFET P-CH 60V 8A PPAK1212-8
Manufacturer Standard Lead Time	63 Weeks
Customer Reference
Detailed Description	P-Channel 60 V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SI7309DN-T1-E3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 30 V
Part Status Active	Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 8A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI7309
Rds On (Max) @ Id, Vgs 115mOhm @ 3.9A, 10V