Diode 650 V 8A Through Hole TO-220-2L
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS8E65H,S1Q

DigiKey Part Number
264-TRS8E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS8E65H,S1Q
Description
DIODE SIL CARBIDE 650V 8A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 8A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 8 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 650 V
Capacitance @ Vr, F
520pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 263
Check for Additional Incoming Stock
Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 43,49000kr 43,49
50kr 22,21440kr 1 110,72
100kr 20,15750kr 2 015,75
500kr 16,55412kr 8 277,06
1 000kr 15,39684kr 15 396,84
2 000kr 14,42428kr 28 848,56
5 000kr 13,84193kr 69 209,65
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 43,49000
Unit Price with VAT:kr 54,36250