N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-220
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TK17E65W,S1X

DigiKey Part Number
TK17E65WS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK17E65W,S1X
Description
MOSFET N-CH 650V 17.3A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK17E65W,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK17E65
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In-Stock: 23
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Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 49,30000kr 49,30
50kr 25,57180kr 1 278,59
100kr 23,27790kr 2 327,79
500kr 19,25864kr 9 629,32
1 000kr 17,96826kr 17 968,26
2 000kr 16,88389kr 33 767,78
5 000kr 16,78107kr 83 905,35
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 49,30000
Unit Price with VAT:kr 61,62500