N-Channel 650 V 29A (Ta) 230W (Tc) Through Hole TO-247
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TK095N65Z5,S1F

DigiKey Part Number
264-TK095N65Z5S1F(S-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK095N65Z5,S1F
Description
650V DTMOS6-HIGH SPEED DIODE
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 29A (Ta) 230W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSVI
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 195
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Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 82,70000kr 82,70
30kr 48,14533kr 1 444,36
120kr 40,55600kr 4 866,72
510kr 34,99451kr 17 847,20
1 020kr 33,46859kr 34 137,96
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 82,70000
Unit Price with VAT:kr 103,37500