N-Channel 600 V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK)
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TSM60NB900CH C5G

DigiKey Part Number
TSM60NB900CHC5G-ND
Manufacturer
Taiwan Semiconductor Corporation
Manufacturer Product Number
TSM60NB900CH C5G
Description
MOSFET N-CHANNEL 600V 4A TO251
Customer Reference
Detailed Description
N-Channel 600 V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK)
EDA/CAD Models
TSM60NB900CH C5G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Taiwan Semiconductor Corporation
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
36.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
TSM60
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Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 20,21000kr 20,21
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 20,21000
Unit Price with VAT:kr 25,26250