Name: SCTW60N120G2
Brand: STMicroelectronics
SKU: 497-SCTW60N120G2-ND
Price: 232.8125 NOK
Availability: InStock

cms-photo-disclaimer

SCTW60N120G2
cms-digikey-product-number	497-SCTW60N120G2-ND
cms-manufacturer	STMicroelectronics
cms-manufacturer-product-number	SCTW60N120G2
cms-description	DISCRETE
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 60A (Tc) 389W (Tc) Through Hole HiP247™
Datasheet	Datasheet
cms-eda-cad-models	SCTW60N120G2 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Bulk
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 8 V
Vgs (Max)	+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	389W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW60