Name: SCTW40N120G2V
Brand: STMicroelectronics
SKU: 497-SCTW40N120G2V-ND
Price: 208.8125 NOK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTW40N120G2V
DigiKey Part Number	497-SCTW40N120G2V-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTW40N120G2V
Description	SILICON CARBIDE POWER MOSFET 120
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Datasheet	Datasheet
EDA/CAD Models	SCTW40N120G2V Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW40