PSMN8R5-100ESQ NXP USA Inc. | Discrete Semiconductor Products

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PSMN8R5-100ESQ
DigiKey Part Number	2156-PSMN8R5-100ESQ-ND
Manufacturer	NXP USA Inc.
Manufacturer Product Number	PSMN8R5-100ESQ
Description	POWER FIELD-EFFECT TRANSISTOR, 1
Customer Reference
Detailed Description	N-Channel 100 V 100A (Tj) 263W (Tc) Through Hole I2PAK
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	NXP USA Inc.
Series	-
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	111 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5512 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	263W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA