PSMN7R8-120ESQ NXP USA Inc. | Discrete Semiconductor Products

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PSMN7R8-120ESQ
DigiKey Part Number	2156-PSMN7R8-120ESQ-ND
Manufacturer	NXP USA Inc.
Manufacturer Product Number	PSMN7R8-120ESQ
Description	POWER FIELD-EFFECT TRANSISTOR, 7
Customer Reference
Detailed Description	N-Channel 120 V 70A (Tc) 349W (Tc) Through Hole I2PAK
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	NXP USA Inc.
Series	-
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	167 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9473 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	349W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number	PSMN7R8