N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-247-3
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FQH8N100C

DigiKey Part Number
FQH8N100C-ND
Manufacturer
onsemi
Manufacturer Product Number
FQH8N100C
Description
MOSFET N-CH 1000V 8A TO247-3
Manufacturer Standard Lead Time
11 Weeks
Customer Reference
Detailed Description
N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
QFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
FQH8N100
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In-Stock: 344
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Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 57,25000kr 57,25
30kr 32,49733kr 974,92
120kr 27,05867kr 3 247,04
510kr 23,07237kr 11 766,91
1 020kr 22,43281kr 22 881,47
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 57,25000
Unit Price with VAT:kr 71,56250