Name: IPI076N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI076N12N3GAKSA1-ND
Price: 45.2625 NOK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPI076N12N3GAKSA1
DigiKey Part Number	IPI076N12N3GAKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI076N12N3GAKSA1
Description	MOSFET N-CH 120V 100A TO262-3
Customer Reference
Detailed Description	N-Channel 120 V 100A (Tc) 188W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet
EDA/CAD Models	IPI076N12N3GAKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 130µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 101 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 60 V
Part Status Last Time Buy	Power Dissipation (Max) 188W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 120 V	Supplier Device Package PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 100A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPI076
Rds On (Max) @ Id, Vgs 7.6mOhm @ 100A, 10V