N-Channel 750 V 16A (Tj) 86W (Tc) Through Hole PG-TO247-4
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IMZA75R140M1HXKSA1

DigiKey Part Number
448-IMZA75R140M1HXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IMZA75R140M1HXKSA1
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 750 V 16A (Tj) 86W (Tc) Through Hole PG-TO247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
16A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
129mOhm @ 4.7A, 20V
Vgs(th) (Max) @ Id
5.6V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
351 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4
Package / Case
TO-247-4
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In-Stock: 169
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Quantity
All prices are in NOK
Tube
QuantityUnit PriceExt Price
1kr 58,59000kr 58,59
30kr 33,25600kr 997,68
120kr 27,68467kr 3 322,16
510kr 23,60171kr 12 036,87
1 020kr 22,92882kr 23 387,40
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 58,59000
Unit Price with VAT:kr 73,23750