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TP90H050WS 900 V 50 mΩ GaN FET in TO-247
Transphorm’s TP90H050WS combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies
Transphorm’s second 900 V GaN FET, the TP90H050WS, offers a typical on-resistance of 50 mΩ with a one kilovolt transient spike rating. The device is JEDEC qualified and available in the thermally-robust TO-247 package. Power systems using the TP90H050WS can reach greater than 99 percent efficiency while generating up to 10 kW of power in typical half-bridge configurations with bridgeless totem-pole power factor correction (PFC). It is suitable for high voltage power applications such as photovoltaic inverters, battery charging, uninterruptable power supplies, lighting, energy storage, and three-phase power systems.
Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient overvoltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and halogen-free packaging
Benefits
- Enables AC/DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard-and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high-speed design
TP90H050WS 900 V 50 mΩ GaN FET in TO-247
| Image | Manufacturer Part Number | Description | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | TP90H050WS | GANFET N-CH 900V 34A TO247-3 | 980 pF @ 600 V | - | 119W (Tc) | 0 - Immediate | $95.31 | View Details |
Published: 2020-07-20
