SICW400N170A-BP 1,700 V SiC MOSFET

Micro Commercial Components' MOSFET features ultra-low on-resistance of only 400 mΩ and high blocking voltage capability

Image of MCC's SICW400N170A-BP 1700V SiC MOSFETMCCs SICW400N170A-BP 1,700 V SiC MOSFET is designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400 mΩ and high blocking voltage capability.

The SiC MOSFET enables high-speed switching while ensuring minimal conduction losses, essential requirements for optimizing frequency-dependent systems.

A standard yet durable TO-247AB package enables effective operation at a gate-source voltage of 20 V with superior thermal stability and an operating junction temperature of +175°C.

This unwavering reliability in harsh conditions only adds to the component's appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.

Features
  • High blocking voltage capability: 1,700 V
  • Ultra-low on-resistance of 400 mΩ enhances efficiency
  • Low capacitance enables faster switching
  • Excellent thermal stability
  • High operating junction temperature: +175°C
  • Standard TO-247AB package
Applications
  • High-voltage power converters
  • EV charging stations
  • Welding equipment
  • Uninterruptible power supplies (UPS)
  • High-efficiency power supply units for PCs and servers
  • Base station power supplies
  • Network power management systems
  • Solar energy systems
  • Energy storage systems (ESS)

SICW400N170A-BP 1,700 V SiC MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET N-CH 1700V 6A TO247ABSICW400N170A-BPMOSFET N-CH 1700V 6A TO247AB1758 - Immediate$111.97View Details
Published: 2024-05-23