SICW400N170A-BP 1,700 V SiC MOSFET
Micro Commercial Components' MOSFET features ultra-low on-resistance of only 400 mΩ and high blocking voltage capability
MCCs SICW400N170A-BP 1,700 V SiC MOSFET is designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400 mΩ and high blocking voltage capability.
The SiC MOSFET enables high-speed switching while ensuring minimal conduction losses, essential requirements for optimizing frequency-dependent systems.
A standard yet durable TO-247AB package enables effective operation at a gate-source voltage of 20 V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component's appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
- High blocking voltage capability: 1,700 V
- Ultra-low on-resistance of 400 mΩ enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature: +175°C
- Standard TO-247AB package
- High-voltage power converters
- EV charging stations
- Welding equipment
- Uninterruptible power supplies (UPS)
- High-efficiency power supply units for PCs and servers
- Base station power supplies
- Network power management systems
- Solar energy systems
- Energy storage systems (ESS)
SICW400N170A-BP 1,700 V SiC MOSFET
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
![]() | ![]() | SICW400N170A-BP | MOSFET N-CH 1700V 6A TO247AB | 1758 - Immediate | $111.97 | View Details |



