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Quantity
All prices are in NOK.
Price Break Unit Price Extended Price
1 7,20000 kr 7,20
10 6,30000 kr 63,00
100 4,83210 kr 483,21
500 3,81960 kr 1 909,80
1 000 3,05568 kr 3 055,68
2 500 2,76923 kr 6 923,07
5 000 2,57823 kr 12 891,15

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IRLD120PBF-ND
Copy   IRLD120PBF-ND
Quantity Available 13 956
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRLD120PBF

Copy   IRLD120PBF
Description MOSFET N-CH 100V 1.3A 4-DIP
Copy   MOSFET N-CH 100V 1.3A 4-DIP
Manufacturer Standard Lead Time 7 Weeks
Detailed Description

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Copy   N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Documents & Media
Datasheets IRLD120
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1269 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 100
Other Names *IRLD120PBF

15:59:26 9.16.2019